The arrival of a new generation of MOSFETs, in its range of Hi-Rel products: the reference IRHNJ9A7130.
The new reference IRHNJ9A7130: a radiation-hardened MOSFET based on N-channel R9 technology.
International Rectifer (Infineon Technologies AG group), specialist in HiRel (High-Reliability / High-Reliability) solutions for extreme environments, completes its range of ruggedized MOSFETs by offering on the market the IRHNJ9A7130 reference, radiation hardened.
The advantages of the IRHNJ9A7130 reference:
The reference IRHNJ9A7130 is a radiation hardened MOSFET (100 kRads), developed from the N-channel R9 technology. The N-channel R9 technology is the latest technology offering improved immunity to SEE (Singe Event Effect) as well as LET (Linear Energy Transfer) performance up to 90 Mev/(mg/cm²). This 100 V, 35 A MOSFET is especially designed for space applications and offers a service life of more than 15 years. Typical applications for the IRHNJ9A7130 reference are space grade DC-DC converters, intermediate bus converters, motor controllers and other high speed switching configurations.
The features of IRHNJ9A7130 :
IRHNJ9A7130 type products are characterized by a TID (total ionizing dose) immunity of 100 kRads. An R DS (on) of 25 mΩ (typical) is 33% lower than the previous generation. In combination with the increased drain current (35 A versus 22 A), this allows the MOSFETs to increase power density and reduce losses in switching applications.
The reference IRHNJ9A7130 is offered in a hermetically sealed SMD-0.5 ceramic package. The dimensions are 10.28 mm x 7.64 mm x 3.12 mm.
For any further information on these products, our technical sales team is at your disposal:
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